Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure

4H-SiC (0001) metal–oxide–semiconductor fieldeffect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall channels on the {112̄0} face, have been fabricated. The 3-D gate structures with a 1–5-μm width and a 0.8-μm height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition...

Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

A lateral trench-gate power metal-oxidesemiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of Pbody region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the perform...

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and pimplanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and ch...

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...